MRF8S21120HSR3

RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793

Overview

The MRF8S21120HR3 and are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

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## Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13-inch Reel.

## Features RF Performance Table

### 2000 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

2110 MHz| 17.4| 34.6| 6.4| –37.5

2140 MHz| 17.5| 34.1| 6.5| –38.0

2170 MHz| 17.6| 34.0| 6.4| –37.6

* Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 160 Watts CW Output Power 3 dB Input Overdrive from Rated Pout

* Typical Pout @ 1 dB Compression Point ≃ 107 Watts CW