MJE702

MJE702图片1
MJE702概述

4.0安培达林顿功率晶体管互补硅40瓦50瓦 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, , MJE703 PNP; and MJE800, MJE802, MJE803 NPN are complementary devices.

Features

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High DC Current Gain -

hFE = 2000 Typ @ IC = 2.0 Adc

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Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
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Choice of Packages -

MJE700 and MJE800 series

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Pb-Free Packages are Available
MJE702中文资料参数规格
技术参数

额定电压DC -80.0 V

额定电流 -4.00 A

极性 PNP

击穿电压集电极-发射极 80 V

集电极最大允许电流 4A

最小电流放大倍数hFE 100

工作温度Max 150 ℃

工作温度Min -55 ℃

封装参数

安装方式 Through Hole

封装 TO-225-3

外形尺寸

封装 TO-225-3

其他

产品生命周期 Unknown

包装方式 Bulk

最小包装 500

符合标准

RoHS标准 RoHS Compliant

含铅标准 Contains Lead

海关信息

ECCN代码 EAR99

数据手册

在线购买MJE702
型号: MJE702
制造商: ON Semiconductor 安森美
描述:4.0安培达林顿功率晶体管互补硅40瓦50瓦 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

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