MMBT2907ALT1HTSA1 编带
Do you require a transistor in your circuit operating in the high-voltage range? This PNP general purpose bipolar junction transistor, developed by Technologies, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
频率 200 MHz
额定电压DC -60.0 V
额定电流 -600 mA
极性 PNP
耗散功率 0.33 W
上升时间 40 ns
击穿电压集电极-发射极 60 V
集电极最大允许电流 0.6A
最小电流放大倍数hFE 100 @150mA, 10V
额定功率Max 330 mW
下降时间 30 ns
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 330 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Last Time Buy
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MMBT2907ALT1HTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
SMBT2907AE6327HTSA1 英飞凌 | 类似代替 | MMBT2907ALT1HTSA1和SMBT2907AE6327HTSA1的区别 |
MMBT2907A-7-F 美台 | 功能相似 | MMBT2907ALT1HTSA1和MMBT2907A-7-F的区别 |
MMBT2907A 意法半导体 | 功能相似 | MMBT2907ALT1HTSA1和MMBT2907A的区别 |