功率MOSFET 50安培， 30伏特，逻辑电平P沟道D2PAK Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK
Power MOSFET
50 Amps, 30 Volts, Logic Level P−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time.
Features
•Avalanche Energy Specified
•Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
•Diode is Characterized for Use in Bridge Circuits
•IDSSand VDSonSpecified at Elevated Temperature
•Short Heatsink Tab Manufactured − Not Sheared
•Specially Designed Leadframe for Maximum Power Dissipation
•Pb−Free Packages are Available
额定电压DC -30.0 V
额定电流 -50.0 A
漏源极电阻 25.0 mΩ
极性 P-Channel
耗散功率 125 W
输入电容 3.50 nF
栅电荷 100 nC
漏源极电压Vds 30.0 V
漏源击穿电压 30.0 V
栅源击穿电压 ±15.0 V
连续漏极电流Ids 50.0 A
上升时间 340 ns
输入电容Ciss 3500pF @25VVds
下降时间 218 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125000 mW
安装方式 Surface Mount
引脚数 3
封装 D2PAK-263
封装 D2PAK-263
产品生命周期 Unknown
包装方式 Tube
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MTB50P03HDL ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MTB50P03HDLT4G 安森美 | 类似代替 | MTB50P03HDL和MTB50P03HDLT4G的区别 |
MTB50P03HDLG 安森美 | 类似代替 | MTB50P03HDL和MTB50P03HDLG的区别 |
MTB50P03HDLT4 安森美 | 功能相似 | MTB50P03HDL和MTB50P03HDLT4的区别 |