MTW16N40E

MTW16N40E概述

TO-247 N-CH 400V 16A

Power MOSFET 16 Amps, 400 Volts

N−Channel TO−247

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

• Robust High Voltage Termination

• Avalanche Energy Specified

• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDSon Specified at Elevated Temperature

• Isolated Mounting Hole Reduces Mounting Hardware

MTW16N40E中文资料参数规格
技术参数

极性 N-CH

漏源极电压Vds 400 V

连续漏极电流Ids 16A

封装参数

安装方式 Through Hole

封装 TO-247

外形尺寸

封装 TO-247

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买MTW16N40E
型号: MTW16N40E
制造商: ON Semiconductor 安森美
描述:TO-247 N-CH 400V 16A
替代型号MTW16N40E
型号/品牌 代替类型 替代型号对比

MTW16N40E

ON Semiconductor 安森美

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