MHT1008NT1

RF Power Transistor,2450 to 2450MHz, 12.5W, Typ Gain in dB is 18.6 @ 2450MHz, 28V, LDMOS, SOT1811

Overview

The MHT1008N 12.5 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band.

For additional information contact ® Semiconductor.

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## Features

* Characterized with series equivalent large-signal impedance parameters and common source S-parameters

* Qualified for operation at 32 Vdc

* Integrated ESD protection

* 150°C case operating temperature

* 150°C die temperature capability

* RoHS Compliant

**Typical Applications**

* Consumer cooking as PA driver

* Commercial cooking as PA driver

## Features RF Performance Tables

### Typical Performance

VDD = 28 Vdc, IDQ = 110 mA

.

*Frequency

MHz

.

* | **Signal Type** | **Gps

dB

.

* | **PAE

%

.

* | **Pout

W

.

*

\---|---|---|---|---

2400| CW| 18.5| 57.5| 12.5

2450| 18.6| 56.3| 12.5

2500| 18.3| 55.6| 12.5

### Load Mismatch/Ruggedness

**Frequency

MHz

.

* | **Signal Type** | **VSWR** | **Pin

W

.

* | **Test

Voltage

.

* | **Result**

\---|---|---|---|---|---

2450| CW| > 5:1

at all Phase Angles| 26

3 dB Overdrive| 32| No Device Degradation