MHT1003NR3

MHT1003NR3图片1
MHT1003NR3图片2
MHT1003NR3概述

RF Power Transistor,2450 to 2450MHz, 263W, Typ Gain in dB is 15.9 @ 2450MHz, 32V, LDMOS, SOT1823

Overview

The 250 W CW RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band.

For additional information contact ® Semiconductor.

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## Features

* Characterized with series equivalent large-signal impedance parameters and common source S-parameters

* Internally pre-matched for ease of use

* Qualified for operation at 32 Vdc

* Integrated ESD protection

* 150°C case operating temperature

* 225°C die temperature capability

* RoHS Compliant

**Typical Applications**

* Consumer cooking

* Commercial cooking

## Features RF Performance Tables

### Typical Performance

VDD = 32 Vdc, IDQ = 25 mA
.
*Frequency
MHz
.
* | **Signal Type** | **Gps
dB
.
* | **PAE
%
.
* | **Pout
W
.
*

\---|---|---|---|---

2400| CW| 15.0| 57.0| 250

2450| 15.9| 59.0| 250

2500| 14.9| 55.0| 250

### Load Mismatch/Ruggedness

**Frequency

MHz
.
* | **Signal Type** | **VSWR** | **Pin
W
.
* | **Test
Voltage
.
* | **Result**

\---|---|---|---|---|---

2450| CW| > 10:1

at all Phase

Angles| 14

3 dB

Overdrive| 32| No

Device

Degradation

MHT1003NR3中文资料参数规格
技术参数

频率 2.4GHz ~ 2.5GHz

输出功率 250 W

增益 15.9 dB

额定电压 32 V

电源电压 32 V

封装参数

引脚数 3

封装 OM-780-2

外形尺寸

封装 OM-780-2

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MHT1003NR3
型号: MHT1003NR3
制造商: NXP 恩智浦
描述:RF Power Transistor,2450 to 2450MHz, 263W, Typ Gain in dB is 15.9 @ 2450MHz, 32V, LDMOS, SOT1823

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