MMRF1314HR5概述
射频金属氧化物半导体场效应RF MOSFET晶体管 RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V
RF Mosfet LDMOS Dual 50V 100mA 1.4GHz 17.7dB 1000W NI-1230-4H
得捷:
TRANS 960-1215MHZ 1000W PEAK 50V
贸泽:
射频金属氧化物半导体场效应RF MOSFET晶体管 RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V
艾睿:
Trans RF MOSFET N-CH 105V 5-Pin NI-1230 T/R
Verical:
Trans RF MOSFET N-CH 105V 5-Pin NI-1230 T/R
RfMW:
RF Power Transistor,1200 to 1400 MHz, 1000 W, Typ Gain in dB is 15.5 @ 1200 MHz, 52 V, LDMOS, SOT1787