射频金属氧化物半导体场效应RF MOSFET晶体管 RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V
RF Mosfet LDMOS Dual 50V 100mA 1.03GHz 18.2dB 1300W NI-1230-4H
得捷:
TRANS 1030MHZ 1550W PEAK 50V
贸泽:
射频金属氧化物半导体场效应RF MOSFET晶体管 RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V
艾睿:
Trans RF MOSFET N-CH 105V 5-Pin NI-1230H T/R
安富利:
Trans MOSFET N-CH -0.5V/105V 4-Pin NI-1230H Box
Verical:
Trans RF MOSFET N-CH 105V 5-Pin NI-1230H T/R
RfMW:
RF Power Transistor,1030 to 1090 MHz, 1300 W, Typ Gain in dB is 18.9 @ 1030 MHz, 50 V, LDMOS, SOT1787