

氮化镓HEMT脉冲功率晶体管3.1 - 3.5 GHz频段,峰值120W , 300US脉冲, 10 %占空比 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
RF Mosfet HEMT 50V 300mA 3.1GHz ~ 3.5GHz 11.2dB 120W
得捷:
FET RF 65V 3.5GHZ
贸泽:
RF JFET Transistors 3.1-3.5GHz 50Volt 120W Pk Gain 11.5dB
Chip1Stop:
Trans JFET 6.7A GaN HEMT 3-Pin
Verical:
Trans JFET 6.7A GaN HEMT 3-Pin