MMBZ27VALT1

MMBZ27VALT1图片1
MMBZ27VALT1图片2
MMBZ27VALT1概述

24和40瓦的峰值功率齐纳瞬态电压抑制器 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors

These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.

Features

• Pb−Free Packages are Available

• SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration

• Working Peak Reverse Voltage Range − 3 V to 26 V

• Standard Zener Breakdown Voltage Range − 5.6 V to 33 V

• Peak Power − 24 or 40 Watts @ 1.0 ms Unidirectional, per Figure 5 Waveform

• ESD Rating of Class N exceeding 16 kV per the Human Body Model

• Maximum Clamping Voltage @ Peak Pulse Current

• Low Leakage < 5.0 A

• Flammability Rating UL 94 V−O

MMBZ27VALT1中文资料参数规格
技术参数

额定电压DC 27.0 V

额定功率 40.0 W

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23

外形尺寸

封装 SOT-23

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

海关信息

ECCN代码 EAR99

数据手册

在线购买MMBZ27VALT1
型号: MMBZ27VALT1
制造商: ON Semiconductor 安森美
描述:24和40瓦的峰值功率齐纳瞬态电压抑制器 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
替代型号MMBZ27VALT1
型号/品牌 代替类型 替代型号对比

MMBZ27VALT1

ON Semiconductor 安森美

当前型号

当前型号

MMBZ27VALT1G

安森美

完全替代

MMBZ27VALT1和MMBZ27VALT1G的区别

MMBZ27VCLT1G

安森美

完全替代

MMBZ27VALT1和MMBZ27VCLT1G的区别

MMBZ27VALT3G

安森美

完全替代

MMBZ27VALT1和MMBZ27VALT3G的区别

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