MRF8P20165WHSR5

射频金属氧化物半导体场效应RF MOSFET晶体管 HV8 2GHZ 165W NI780S-4

Overview

The MRF8P20165WHR3 and MRF8P20165WHSR3 are designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 1880 to 2025 MHz.

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## Features

* Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃ 100 MHz.

* Designed for Wideband Applications that Require 65 MHz Signal Bandwidth

* Production Tested in a Symmetrical Doherty Configuration

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

* NI-780-4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.

* NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.

## Features RF Performance Table

### 1900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.3 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

1930 MHz| 16.1| 47.0| 7.1| –27.7

1960 MHz| 16.3| 47.7| 7.1| –29.7

1995 MHz| 16.3| 46.0| 7.0| –33.3

* Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 173 Watts CW Output Power 2 dB Input Overdrive from Rated Pout

* Typical Pout @ 3 dB Compression Point ≃ 190 Watts