MRT100KP75AE3

MRT100KP75AE3图片1
MRT100KP75AE3概述

75V 100000W

These MRT100KP40A to MRT100KP400CA high reliability devices protect against dangerous high-voltage, short term transients such as those caused the the secondary effects of lightning per IEC61000-4-5 see protection classes below and RTCA/DO-160. They also protect against voltage spikes caused by inductive load switching, induced RFI, and ESD or EFT per IEC61000-4-2 and IEC61000-4-4. Clamping time is nearly instantaneous at <5ns.


艾睿:
Do not risk expensive equipment and machinery from surges with this MRT100KP75AE3 TVS diode from Microsemi. This device&s;s maximum clamping voltage is 147 V and minimum breakdown voltage is 83.3 V. Its peak pulse power dissipation is 100000 W. Its maximum leakage current is 10 μA. Its test current is 5 mA. This TVS diode has an operating temperature range of -65 °C to 150 °C. This product comes packaged in bulk, so the parts will be stored loosely.


MRT100KP75AE3中文资料参数规格
技术参数

钳位电压 147 V

最大反向电压(Vrrm) 75V

测试电流 5 mA

脉冲峰值功率 100000 W

最小反向击穿电压 83.3 V

工作温度Max 150 ℃

工作温度Min -65 ℃

工作结温 -65℃ ~ 150℃

封装参数

安装方式 Through Hole

引脚数 2

封装 DO-204AR

外形尺寸

封装 DO-204AR

物理参数

工作温度 -65℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Bag

制造应用 通用

符合标准

RoHS标准 RoHS Compliant

含铅标准 Contains Lead

数据手册

MRT100KP75AE3引脚图与封装图
MRT100KP75AE3引脚图
MRT100KP75AE3封装图
MRT100KP75AE3封装焊盘图
在线购买MRT100KP75AE3
型号: MRT100KP75AE3
描述:75V 100000W

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