晶体管, 射频FET, 135 VDC, 1.667 kW, 1.8 MHz, 500 MHz, NI-1230
Overview
This high ruggedness device, MRF1K50H, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.
For additional information contact Semiconductor.
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## Features
* High Drain-source Avalanche Energy Absorption Capability
* Unmatched Input and Output
* Device Can Be Used Single-Ended or in a Push-Pull Configuration
* Characterized from 30 to 50 V
* High Rugggedness. Handles 65:1 VSWR.
* This product is included in our product longevity program with assured supply for a minimum of 15 years after launch.
* RoHS Compliant
* Recommended Driver: MRFE6VS25N 25 W
* Lower Thermal Resistance Part Available: MRF1K50N
**Popular Applications**
* Industrial, Scientific, Medical ISM
* Laser generation
* Plasma etching
* Particle accelerators
* MRI, diathermy, skin laser and ablation
* Industrial heating, welding and drying systems
* Broadcast
* Radio broadcast
* VHF TV broadcast
* Aerospace
* VHF omnidirectional range VOR
* HF and VHF communications
* Weather radar
* Mobile Radio
* VHF and UHF base stations
## Features RF Performance Table
### Typical Performance
VDD = 50 Vdc- .
- *Frequency
- .
- * | **Signal Type** | **Pout
- .
- * | **Gps
- .
- * | **ηD
- .
- *
\---|---|---|---|---
27| CW| 1550 CW| 25.9| 78.3
81.361| CW| 1400 CW| 23.0| 75.0
87.5-1082,3| CW| 1475 CW| 23.3| 83.4
2304| Pulse
100 µsec, 20% Duty Cycle| 1500 Peak| 23.7| 74.0
1\\. Data from 81.36 MHz narrowband reference circuit.
2\\. Data from 87.5-108 MHz broadband reference circuit.
3\\. The values shown are the center band performance numbers across the indicated frequency range.
4\\. Data from 230 MHz narrowband production test fixture.