M29F200T-120N1TR

2兆位256Kb的X8或X16 128KB ，引导块单电源闪存 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION

The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

FASTACCESS TIME: 55ns

FAST PROGRAMMING TIME

  – 10µs by Byte / 16µs by Word typical

PROGRAM/ERASE CONTROLLER P/E.C.

  – Program Byte-by-Byte or Word-by-Word

  – Status Register bits and Ready/Busy Output

MEMORY BLOCKS

  – Boot Block Top or Bottom location

  – Parameter and Main blocks

BLOCK, MULTI-BLOCK and CHIP ERASE

MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES

ERASE SUSPEND and RESUME MODES

  – Read and Program another Block during Erase Suspend

LOW POWER CONSUMPTION

  – Stand-byand Automatic Stand-by

100,000 PROGRAM/ERASE CYCLES per BLOCK

20 YEARS DATARETENTION

  – Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

  – Manufacturer Code: 0020h

  – Device Code, M29F200T: 00D3h

  – Device Code, M29F200B: 00D4h