MMDF2P02HD

MMDF2P02HD概述

功率MOSFET 2安培, 20伏P沟道SO- 8 ,双 Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual

Power MOSFET 2 Amps, 20 Volts

P−Channel SO−8, Dual

These miniature surface mount MOSFETs feature ultra low RDSon and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOSdevices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

Features

•Ultra Low RDSonProvides Higher Efficiency and Extends Battery Life

•Logic Level Gate Drive − Can Be Driven by Logic ICs

•Miniature SO−8 Surface Mount Package − Saves Board Space

•Diode Is Characterized for Use In Bridge Circuits

•Diode Exhibits High Speed, With Soft Recovery

•IDSSSpecified at Elevated Temperature

•Avalanche Energy Specified

•Mounting Information for SO−8 Package Provided

•Pb−Free Package is Available

MMDF2P02HD中文资料参数规格
技术参数

极性 P-CH

漏源极电压Vds 20 V

连续漏极电流Ids 3.3A

封装参数

安装方式 Surface Mount

封装 SOIC

外形尺寸

封装 SOIC

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买MMDF2P02HD
型号: MMDF2P02HD
制造商: ON Semiconductor 安森美
描述:功率MOSFET 2安培, 20伏P沟道SO- 8 ,双 Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual
替代型号MMDF2P02HD
型号/品牌 代替类型 替代型号对比

MMDF2P02HD

ON Semiconductor 安森美

当前型号

当前型号

MMDF2P02HDR2G

安森美

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MMDF2P02HDR2

安森美

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