MJE253

功率晶体管互补硅 POWER TRANSISTORS COMPLEMENTARY SILICON

The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.

Features

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High Collector-Emitter Sustaining Voltage -

VCEOsus = 100 Vdc Min MJE243,

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High DC Current Gain @ IC = 200 mAdc

hFE = 40-200

hFE = 40-120 - MJE243, MJE253

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Low Collector-Emitter Saturation Voltage -

VCEsat = 0.3 Vdc Max @ IC = 500 mAdc

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High Current Gain Bandwidth Product -

fT = 40 MHz Min @ IC = 100 mAdc

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Annular Construction for Low Leakages

ICBO = 100 nAdc Max @ Rated VCB

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Pb-Free Packages are Available