RF Power Transistor,1.8 to 500MHz, 1500W, Typ Gain in dB is 23.4 @ 230MHz, 50V, LDMOS, SOT1824
Overview
These high ruggedness devices, MRF1K50N and MRF1K50GN, are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.
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## Features
* High drain-source avalanche energy absorption capability
* Unmatched input and output allowing wide frequency range utilization
* Device can be used single-ended or in a push-pull configuration
* Characterized from 30 to 50 V for ease of use
* Suitable for linear application
* Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
* RoHS compliant
* Recommended driver: MRFE6VS25N 25 W
**Popular Applications**
* Industrial, Scientific, Medical ISM
* Laser generation
* Plasma etching
* Particle accelerators
* MRI, diathermy, skin laser and ablation
* Industrial heating, welding and drying systems
* Broadcast
* Radio broadcast
* VHF TV broadcast
* Aerospace
* VHF omnidirectional range VOR
* HF and VHF communications
* Weather radar
* Mobile Radio
* VHF and UHF base stations
## Features RF Performance Tables
### Typical Performance
VDD = 50 Vdc- .
- *Frequency
- .
- * | **Signal Type** | **Pout
- .
- * | **Gps
- .
- * | **ηD
- .
- *
\---|---|---|---|---
87.5-1081,2| CW| 1421 CW| 23.1| 83.2
2303,4| Pulse
100 µsec, 20% Duty Cycle| 1500 Peak| 23.4| 75.1
### Load Mismatch/Ruggedness
**Frequency
MHz- .
- * | **Signal Type** | **VSWR** | **Pin
- .
- * | **Test
- .
- * | **Result**
\---|---|---|---|---|---
2303 | Pulse
100 µsec, 20% Duty Cycle | > 65:1 at all Phase Angles | 15 Peak
3 dB Overdrive | 50 | No Device Degradation
1\\. Data from 87.5-108 MHz wideband reference circuit.
2\\. The values shown are the center band performance numbers across the indicated frequency range.
3\\. Data from 230 MHz narrowband production test fixture.
4\\. All data measured in fixture with device soldered to heatsink.