MM74C89N

64位三态随机存取存储器读/写 64-Bit 3-STATE Random Access Read/Write Memory

General Description

The MM74C89 is a 16-word by 4-bit random access read/write memory. Inputs to the memory consist of four address lines, four data input lines, a write enable line and a memory enable line. The four binary address inputs are decoded internally to select each of the 16 possible word locations. An internal address register latches the address information on the positive to negative transition of the memory enable input. The four 3-STATE data output lines working in conjunction with the memory enable input provide for easy memory expansion.

Features

■ Wide supply voltage range: 3.0V to 15V

■ Guaranteed noise margin: 1.0V

■ High noise immunity: 0.45 VCC typ.

■ Low power TTL compatibility:

  fan out of 2 driving 74L

■ Low power consumption: 100 nW/package typ.

■ Fast access time: 130 ns typ. at VCC = 10V

■ 3-STATE output