M28W160CT100N6T

M28W160CT100N6T概述

16Mbit 1Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION

The M28W160C is a 16 Mbit 1 Mbit x 16 non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage 2.7 to 3.6V supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

   – VDD = 2.7V to 3.6V Core Power Supply

   – VDDQ= 1.65V to 3.6V for Input/Output

   – VPP = 12V for fast Program optional

■ ACCESS TIME: 70, 85, 90,100ns

■ PROGRAMMING TIME:

   – 10µs typical

   – Double Word Programming Option

■ COMMON FLASH INTERFACE

   – 64 bit Security Code

■ MEMORY BLOCKS

   – Parameter Blocks Top or Bottom location

   – Main Blocks

■ BLOCK LOCKING

   – All blocks locked at Power Up

   – Any combination of blocks can be locked

   – WP for Block Lock-Down

■ SECURITY

   – 64 bit user Programmable OTP cells

   – 64 bit unique device identifier

   – One Parameter Block Permanently Lockable

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ECOPACK® PACKAGES AVAILABLE

■ ELECTRONIC SIGNATURE

   – Manufacturer Code: 20h

M28W160CT100N6T中文资料参数规格
封装参数

封装 TSOP1

外形尺寸

封装 TSOP1

其他

产品生命周期 Obsolete

数据手册

在线购买M28W160CT100N6T
型号: M28W160CT100N6T
制造商: Numonyx
描述:16Mbit 1Mb x16, Boot Block 3V Supply Flash Memory
替代型号M28W160CT100N6T
型号/品牌 代替类型 替代型号对比

M28W160CT100N6T

Numonyx

当前型号

当前型号

M28W160BT100N1T

意法半导体

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M28W160CT100N6T和M28W160BT100N1T的区别

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