MOC205M

光电耦合器, 1通道, SOIC, 8 引脚, 60 mA, 2.5 kV, 40 %

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the-board mounting.

Features

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Closely Matched Current Transfer Ratios

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Minimum BVCEO of 70 V Guaranteed

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, MOC206M, MOC207M

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Minimum BVCEO of 30 V Guaranteed

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MOC211M, MOC212M, MOC213M, MOC216M,MOC217M

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Low LED Input Current Required for Easier Logic Interfacing

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MOC216M, MOC217M

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Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing

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Safety and Regulatory Approvals:

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UL1577, 2,500 VACRMS for 1 Minute

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DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage