

MMBT3906LP 系列 PNP 40 V 200 mA 表面贴装 小信号 晶体管 - X1-DFN1006-3
- 双极 BJT - 单 PNP 40 V 200 mA 300MHz 250 mW 表面贴装型 X1-DFN1006-3
得捷:
TRANS PNP 40V 0.2A 3DFN
立创商城:
PNP 40V 200mA
贸泽:
双极晶体管 - 双极结型晶体管BJT General Purpose Tran X1-DFN1006-3,10K
艾睿:
Diodes Zetex brings you the solution to your high-voltage BJT needs with their PNP MMBT3906LP-7B general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 460 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
安富利:
Trans GP BJT PNP 40V 0.2A 3-Pin DFN T/R
Verical:
Trans GP BJT PNP 40V 0.2A 1000mW 3-Pin X1-DFN T/R
DeviceMart:
TRANS PNP 40V 200MA DFN1006-3
频率 300 MHz
极性 PNP
耗散功率 1 W
击穿电压集电极-发射极 40 V
集电极最大允许电流 0.2A
最小电流放大倍数hFE 100 @10mA, 1V
额定功率Max 250 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 460 mW
安装方式 Surface Mount
引脚数 3
封装 DFN-3
封装 DFN-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MMBT3906LP-7B Diodes 美台 | 当前型号 | 当前型号 |
ZTX653 美台 | 功能相似 | MMBT3906LP-7B和ZTX653的区别 |
ZTX603 美台 | 功能相似 | MMBT3906LP-7B和ZTX603的区别 |
BCX38C 美台 | 功能相似 | MMBT3906LP-7B和BCX38C的区别 |