MMBT5401-7-F 编带
MMBT5401 Series PNP -150 V 300 mW Small Signal Transistor Surface Mount-SOT-23-3
得捷:
TRANS PNP 150V 0.6A SOT23-3
立创商城:
PNP 150V 600mA
贸泽:
Bipolar Transistors - BJT SS PNP 300mW
e络盟:
单晶体管 双极, PNP, -150 V, 300 MHz, 310 mW, -600 mA, 50 hFE
艾睿:
Look no further than Diodes Zetex&s;s PNP MMBT5401-7-F general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
Allied Electronics:
Trans GP BJT PNP 150V 0.6A 3Pin SOT23
安富利:
Trans GP BJT PNP 150V 0.6A 3-Pin SOT-23 T/R
Chip1Stop:
Trans GP BJT PNP 150V 0.6A 3-Pin SOT-23 T/R
Verical:
Trans GP BJT PNP 150V 0.6A Automotive 3-Pin SOT-23 T/R
儒卓力:
**PNP TRANSISTOR 150V 0,6A SOT23 **
Win Source:
TRANS PNP 150V 0.6A SMD SOT23-3
DeviceMart:
TRANS PNP 150V 350MW SMD SOT23-3
频率 300 MHz
额定电压DC -150 V
额定电流 -200 mA
额定功率 0.3 W
针脚数 3
耗散功率 300 mW
增益频宽积 300 MHz
击穿电压集电极-发射极 150 V
最小电流放大倍数hFE 60 @10mA, 5V
最大电流放大倍数hFE 240
额定功率Max 300 mW
直流电流增益hFE 50
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 300 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 3.05 mm
宽度 1.4 mm
高度 1 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
香港进出口证 NLR
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MMBT5401-7-F Diodes 美台 | 当前型号 | 当前型号 |
ZXTP5401FLTA 美台 | 类似代替 | MMBT5401-7-F和ZXTP5401FLTA的区别 |
MMBT5401LT1G 安森美 | 功能相似 | MMBT5401-7-F和MMBT5401LT1G的区别 |
MMBT5401-TP 美微科 | 功能相似 | MMBT5401-7-F和MMBT5401-TP的区别 |