MMBT2222AQ-7-F

MMBT2222AQ-7-F图片1
MMBT2222AQ-7-F图片2
MMBT2222AQ-7-F概述

双极晶体管 - 双极结型晶体管BJT SS Mid-Perf Transistor SOT23 T&R; 3K

Look no further than Zetex"s NPN general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 350 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

MMBT2222AQ-7-F中文资料参数规格
技术参数

频率 300 MHz

极性 NPN

耗散功率 0.35 W

击穿电压集电极-发射极 40 V

集电极最大允许电流 0.6A

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 350 mW

封装参数

引脚数 3

封装 SOT-23

外形尺寸

封装 SOT-23

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MMBT2222AQ-7-F
型号: MMBT2222AQ-7-F
制造商: Diodes 美台
描述:双极晶体管 - 双极结型晶体管BJT SS Mid-Perf Transistor SOT23 T&R; 3K
替代型号MMBT2222AQ-7-F
型号/品牌 代替类型 替代型号对比

MMBT2222AQ-7-F

Diodes 美台

当前型号

当前型号

MMBT2222A-13-F

美台

完全替代

MMBT2222AQ-7-F和MMBT2222A-13-F的区别

CMPT2222ATR

Central Semiconductor

类似代替

MMBT2222AQ-7-F和CMPT2222ATR的区别

MMBT2222A-7-F

美台

功能相似

MMBT2222AQ-7-F和MMBT2222A-7-F的区别

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