



Trans GP BJT PNP 100V 3A 15000mW Automotive 3Pin2+Tab TO-252 T/R
The three terminals of this PNP GP BJT from Zetex give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 15000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
频率 3 MHz
极性 PNP
耗散功率 15 W
击穿电压集电极-发射极 100 V
集电极最大允许电流 3A
最小电流放大倍数hFE 10 @3A, 4V
额定功率Max 15 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 15000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MJD32CQ-13 Diodes 美台 | 当前型号 | 当前型号 |
MJD32C-13 美台 | 类似代替 | MJD32CQ-13和MJD32C-13的区别 |