






MMBT2222ALP4 系列 40 V 600 mA NPN 小信号 晶体管 - X2-DFN1006-3
- 双极 BJT - 单 NPN 300MHz 表面贴装型 X2-DFN1006-3
得捷:
TRANS NPN 40V 0.6A 3DFN
立创商城:
NPN 40V 600mA
贸泽:
双极晶体管 - 双极结型晶体管BJT General Purpose Tran X2-DFN1006-3 T&R; 10K
艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MMBT2222ALP4-7B GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
Allied Electronics:
40V NPN Small Signal Transistor DFN3
Chip1Stop:
Trans GP BJT NPN 40V 0.6A Automotive 3-Pin DFN EP T/R
Verical:
Trans GP BJT NPN 40V 0.6A 1000mW Automotive 3-Pin X2-DFN T/R
儒卓力:
**NPN TRAN 40V 0,6A DFN1006-3 **
Win Source:
TRANS NPN 40V 0.6A 3DFN
DeviceMart:
TRANS NPN 40V 600MA 3DFN
频率 300 MHz
极性 NPN
耗散功率 1 W
击穿电压集电极-发射极 40 V
集电极最大允许电流 0.6A
最小电流放大倍数hFE 100 @150mA, 10V
额定功率Max 460 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1000 mW
安装方式 Surface Mount
引脚数 3
封装 DFN1006-3
封装 DFN1006-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99