MMST5401-7-F

MMST5401 系列 PNP 150 V 200 mW 小信号 晶体管 表面贴装 - SOT-323-3

- 双极 BJT - 单 PNP 150 V 200 mA 300MHz 200 mW 表面贴装型 SOT-323

立创商城:
PNP 150V 200mA

得捷:
TRANS PNP 150V 0.2A SOT323

贸泽:
双极晶体管 - 双极结型晶体管BJT PNP BIPOLAR

e络盟:
单晶体管 双极, PNP, -150 V, 300 MHz, 200 mW, -200 mA, 60 hFE

艾睿:
Implement this PNP MMST5401-7-F GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 5 V.

Allied Electronics:
Transistor PNP 150V 0.2A SOT323

安富利:
Trans GP BJT PNP 150V 0.2A 3-Pin SOT-323 T/R

Chip1Stop:
Trans GP BJT PNP 150V 0.2A 3-Pin SOT-323 T/R

Verical:
Trans GP BJT PNP 150V 0.2A Automotive 3-Pin SOT-323 T/R

Newark:
# DIODES INC.  MMST5401-7-F  Bipolar BJT Single Transistor, PNP, -150 V, 300 MHz, 200 mW, -200 mA, 60 hFE

儒卓力:
**PNP TRANS 150V 0,2A SOT323 **

Win Source:
TRANS PNP 150V 0.2A SC70-3

DeviceMart:
TRANS PNP 150V 200MA SC70-3