双极晶体管 - 双极结型晶体管BJT -25V 300mW
Implement this versatile PNP GP BJT from Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 4 V.
频率 250 MHz
额定电压DC -25.0 V
额定电流 -200 mA
额定功率 0.3 W
极性 PNP
耗散功率 0.2 W
击穿电压集电极-发射极 25 V
集电极最大允许电流 0.2A
最小电流放大倍数hFE 120 @2mA, 1V
最大电流放大倍数hFE 360
额定功率Max 300 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 3.05 mm
宽度 1.4 mm
高度 1 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MMBT4126-7-F Diodes 美台 | 当前型号 | 当前型号 |
MMBT4126-7 美台 | 完全替代 | MMBT4126-7-F和MMBT4126-7的区别 |