MRF101BN概述
晶体管, 射频FET, 133 V, 182 W, 1.8 MHz, 250 MHz, TO-220
These devices are designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The devices are exceptionally rugged and exhibit high performance up to 250 MHz.
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- Mirror pinout versions A and B to simplify use in a push-pull, two-up configuration
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- Characterized from 30 to 50 V
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- Suitable for linear application
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- Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
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- Included in product longevity program with assured supply for a minimum of 15 years after launch