OPTEK TECHNOLOGY OP804SL 光电三极管,TO-18
The is a Silicon NPN Phototransistor mounted in a hermetically sealed package that offers high power dissipation and superior hostile environment operation. The base lead is bonded to enable conventional transistor biasing. Device is 100% production tested using an infrared light source for close correlation with OPTEK"s GaAs and GaAIAs emitters.
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- Narrow receiving angle
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- Enhanced temperature range
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- Mechanically and spectrally matched to the OP130 and OP231 series of infrared emitting diodes
电源电压DC 30.0 V
额定电压DC 30.0 V
工作电压 30.0 V
输出电压 ≤30.0 V
针脚数 3
波长 890 nm
视角 25°
极性 NPN
耗散功率 250 mW
功耗 250 mW
上升时间 7000 ns
击穿电压集电极-发射极 30 V
额定功率Max 250 mW
下降时间 7 µs
下降时间Max 7000 ns
上升时间Max 7000 ns
工作温度Max 125 ℃
工作温度Min -65 ℃
耗散功率Max 250 mW
安装方式 Through Hole
引脚数 3
封装 TO-18-3
长度 5.84 mm
宽度 5.84 mm
高度 6.86 mm
封装 TO-18-3
材质 Silicon
工作温度 -65℃ ~ 125℃ TA
产品生命周期 Active
包装方式 Bulk
制造应用 工业, 便携式器材, 传感与仪器, Industrial, Portable Devices, Sensing & Instrumentation, Sensing & Instrumentation, Portable Devices, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 ECL99