Phototransistor IR Chip Silicon 3Pin TO-18
* High reliability screening patterned after MIL-PRF-19500
* Each lot subjected to Group A & B Lot Acceptance
* Lensed for high sensitivity
* Mechanically and spectrally matched to the OP235TX/TXV and OP236TX/TXV series IREDs
得捷:
SENSOR PHOTO 890NM TOP TO206AA
贸泽:
Phototransistors TO-18, NPN SILICON PHOTO TRANS
艾睿:
Phototransistor IR Chip Silicon 3-Pin TO-18
Allied Electronics:
TO-18NPN SILICON PHOTO TRANSISTOR
波长 890 nm
视角 24°
耗散功率 250 mW
击穿电压集电极-发射极 30 V
额定功率Max 250 mW
下降时间Max 15000 ns
上升时间Max 15000 ns
工作温度Max 125 ℃
工作温度Min -55 ℃
耗散功率Max 250 mW
安装方式 Through Hole
引脚数 3
封装 TO-206
封装 TO-206
材质 Silicon
工作温度 -65℃ ~ 125℃ TA
产品生命周期 Active
包装方式 Bulk
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
OP805TXV TT Electronics/Optek Technology | 当前型号 | 当前型号 |
61058-104 Micropac | 功能相似 | OP805TXV和61058-104的区别 |