双双极性/ JFET ,音频运算放大器 Dual Bipolar/JFET, Audio Operational Amplifier
Product Details
The OP275 is the first amplifier to feature the Butler Amplifier front-end. This new front-end design combines both bipolar and JFET transistors to attain amplifiers with the accuracy and low noise performance of bipolar transistors, and the speed and sound quality of JFET"s. Total Harmonic Distortion plus Noise equals that of previous audio amplifiers, but at much lower supply currents.
A very low l/f corner of below 6 Hz maintains a flat noise density response. Whether noise is measured at either 30 Hz or 1kHz, it is only 6 nV/rootHz. The JFET portion of the input stage gives the OP275 its high slew rates to keep distortion low, even when large output swings are required, and the 22 V/µs slew rate of the OP275 is the fastest of any standard audio amplifier. Best of all, this low noise and high speed are accomplished using less than 5mA of supply current, lower than any standard audio amplifier.
Improved dc performance is also provided with bias and offset currents greatly reduced over purely bipolar designs. Input offset voltage is guaranteed at 1mV and is typically less than 200µV. This allows the OP275 to be used in many dc coupled or summing applications without the need for special selections or the added noise of additional offset adjustment circuitry.
The output os capable of driving 600 Ohm loads to 10 V rms while maintaining low distortion. THD + Noise at 3 V rms is a low 0.0006%.
The OP275 is specified over the extended industrial -40°C to +85°C temperature range. OP275s are availale in both plastic DIP and SOIC-8 packages. SOIC-8 packages are available in 2500 piece reels. Many audio amplifiers are not offered in SOIC-8 surface mount packages for a variety of reasons; however, the OP275 was designed so that it would offer full performance in surface mount packaging.
### Features and Benefits
供电电流 30 mA
电路数 2
通道数 2
针脚数 8
共模抑制比 80 dB
带宽 9 MHz
转换速率 22.0 V/μs
增益频宽积 9 MHz
输入补偿电压 1 mV
输入偏置电流 100 nA
工作温度Max 85 ℃
工作温度Min -40 ℃
增益带宽 9 MHz
共模抑制比Min 80 dB
电源电压Max 22 V
电源电压Min 4.5 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -40℃ ~ 85℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Healthcare, Imaging, Digital X-Ray, CT-Imaging
RoHS标准 RoHS Compliant
含铅标准 Lead Free
军工级 No
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
OP275GSZ-REEL7 ADI 亚德诺 | 当前型号 | 当前型号 |
OP275GSZ 亚德诺 | 完全替代 | OP275GSZ-REEL7和OP275GSZ的区别 |
OP275GPZ 亚德诺 | 完全替代 | OP275GSZ-REEL7和OP275GPZ的区别 |
OP275GS-REEL7 亚德诺 | 完全替代 | OP275GSZ-REEL7和OP275GS-REEL7的区别 |