NXP PBSS4350Z 单晶体管 双极, NPN, 50 V, 1.35 W, 3 A, 200 hFE
The is a NPN low VCEsat Transistor housed in a surface-mount plastic package. It offers collector pad for good heat transfer.
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- Low collector-emitter saturation voltage
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- High collector current capabilities of IC and ICM
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- High collector current gain hFE at high IC
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- Higher efficiency leading to less heat generation
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- Reduced PCB area requirements compared to DPAK
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- PNP complement is PBSS5350Z
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- PB4350 Marking code
针脚数 4
极性 NPN
耗散功率 1.35 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 3A
最小电流放大倍数hFE 200
直流电流增益hFE 200
工作温度Max 150 ℃
工作温度Min -65 ℃
安装方式 Surface Mount
引脚数 4
封装 SOT-223
封装 SOT-223
工作温度 -65℃ ~ 150℃
产品生命周期 Unknown
包装方式 Cut Tape CT
制造应用 Power Management, Consumer Electronics, Industrial, Signal Processing, Motor Drive & Control, Lighting
RoHS标准 RoHS Compliant
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PBSS4350Z NXP 恩智浦 | 当前型号 | 当前型号 |
PBSS4350Z/T3 恩智浦 | 完全替代 | PBSS4350Z和PBSS4350Z/T3的区别 |
DJT4031N-13 美台 | 功能相似 | PBSS4350Z和DJT4031N-13的区别 |
PBSS4350Z,135 恩智浦 | 功能相似 | PBSS4350Z和PBSS4350Z,135的区别 |