NXP PSMN3R3-40YS 晶体管, MOSFET, N沟道, 100 A, 40 V, 2.6 mohm, 10 V, 3 V
The is a N-channel standard level MOSFET with advanced TrenchMOS technology provides low RDS ON and low gate charge. It is designed and qualified for use in a wide range of DC-to-DC convertor, lithium-ion battery protection, load switching, server power supplies and domestic equipment applications.
- .
- Improved mechanical and thermal characteristics
- .
- High efficiency gains in switching power converters
- .
- LFPAK provides maximum power density in a power SO8 package
- .
- -55 to 175°C Junction temperature range
针脚数 4
漏源极电阻 0.0026 Ω
极性 N-Channel
耗散功率 117 W
阈值电压 3 V
漏源极电压Vds 40 V
连续漏极电流Ids 100A
输入电容Ciss 2754pF @20VVds
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 117 W
安装方式 Surface Mount
引脚数 4
封装 SOT-669
长度 5 mm
宽度 4.1 mm
高度 1.1 mm
封装 SOT-669
产品生命周期 Unknown
包装方式 Cut Tape CT
制造应用 Power Management, Consumer Electronics, Industrial, Communications & Networking, Motor Drive & Control
RoHS标准 Exempt
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PSMN3R3-40YS NXP 恩智浦 | 当前型号 | 当前型号 |
PSMN8R5-60YS 恩智浦 | 类似代替 | PSMN3R3-40YS和PSMN8R5-60YS的区别 |
PH20100S,115 恩智浦 | 类似代替 | PSMN3R3-40YS和PH20100S,115的区别 |
PSMN020-100YS 恩智浦 | 类似代替 | PSMN3R3-40YS和PSMN020-100YS的区别 |