NXP PSMN012-60YS 晶体管, MOSFET, N沟道, 59 A, 60 V, 8 mohm, 10 V, 3 V
The is a N-channel standard level MOSFET offers high efficiency gains in switching power converters. It is designed and qualified for use in a wide range of DC-to-DC convertor, lithium-ion battery protection, load switching, server power supplies and domestic equipment applications.
- .
- Advanced TrenchMOS provides low RDS ON and low gate charge
- .
- Improved mechanical and thermal characteristics
- .
- LFPAK provides maximum power density in a power SO8 package
- .
- -55 to 175°C Junction temperature range
额定功率 89 W
针脚数 4
漏源极电阻 8 mΩ
极性 N-Channel
耗散功率 89 W
阈值电压 3 V
漏源极电压Vds 60 V
输入电容Ciss 1685pF @30VVds
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 89 W
安装方式 Surface Mount
引脚数 4
封装 SOT-669
长度 5 mm
宽度 4.1 mm
高度 1.1 mm
封装 SOT-669
工作温度 -55℃ ~ 175℃
产品生命周期 Unknown
包装方式 Cut Tape CT
制造应用 Consumer Electronics, Power Management, Motor Drive & Control, Communications & Networking, Industrial
RoHS标准 Exempt
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PSMN012-60YS NXP 恩智浦 | 当前型号 | 当前型号 |
BUK9Y11-30B 恩智浦 | 类似代替 | PSMN012-60YS和BUK9Y11-30B的区别 |