NXP PSMN025-100D,118 晶体管, MOSFET, N沟道, 25 A, 100 V, 0.022 ohm, 10 V, 3 V
The is a SiliconMAX standard level N-channel enhancement-mode FET in a plastic package using TrenchMOS® technology. It is designed and qualified for use in DC-to-DC converters and switched-mode power supply applications.
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- Higher operating power due to low thermal resistance
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- Suitable for high frequency applications due to fast switching characteristics
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- Low conduction losses due to low ON-state resistance
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- -55 to 175°C Junction temperature range
针脚数 3
漏源极电阻 0.022 Ω
极性 N-Channel
耗散功率 150 W
阈值电压 3 V
漏源极电压Vds 100 V
连续漏极电流Ids 47.0 A
上升时间 72 ns
输入电容Ciss 2600pF @25VVds
额定功率Max 150 W
下降时间 58 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 150W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.38 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PSMN025-100D,118 NXP 恩智浦 | 当前型号 | 当前型号 |
FDD3672 飞兆/仙童 | 功能相似 | PSMN025-100D,118和FDD3672的区别 |
FDD86102 飞兆/仙童 | 功能相似 | PSMN025-100D,118和FDD86102的区别 |
STD70N10F4 意法半导体 | 功能相似 | PSMN025-100D,118和STD70N10F4的区别 |