PSMN6R0-30YLD

NXP  PSMN6R0-30YLD  晶体管, MOSFET, N沟道, 66 A, 30 V, 0.005 ohm, 10 V, 1.83 V

The is a N-channel enhancement-mode logic level gate drive MOSFET optimised for 4.5V gate drive. NextPowerS3 portfolio utilising "s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

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Ultra-low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies

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Superfast switching with soft-recovery s-factor>1

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Low spiking and ringing for low EMI designs

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Unique SchottkyPlus technology

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Schottky-like performance with <1µA leakage at 25°C

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Low parasitic inductance and resistance

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High reliability clip bonded and solder die attach power SO8 package

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No glue, no wire bonds, qualified to 175°C

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Wave solderable, exposed leads for optimal visual solder inspection

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-55 to 175°C Junction temperature range