PMXB120EPE

NXP  PMXB120EPE  晶体管, MOSFET, P沟道, -2.4 A, -30 V, 0.1 ohm, -10 V, -1.5 V

The is a P-channel enhancement-mode FET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in high-side load switch and charging switch for portable devices, power management in battery driven portables, LED driver and DC-to-DC converter applications.

.

Leadless ultra small and ultra thin SMD plastic package

.

Exposed drain pad for excellent thermal conduction

.

1kV ESD protection HBM

.

100mR Drain-source ON-state resistance RDS ON

.

-55 to 150°C Junction temperature range