PMXB40UNE

NXP  PMXB40UNE  晶体管, MOSFET, N沟道, 3.2 A, 12 V, 0.034 ohm, 4.5 V, 650 mV

The is a N-channel enhancement-mode FET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in high-side load switch and charging switch for portable devices, power management in battery driven portables, LED driver and DC-to-DC converter applications.

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Leadless ultra small and ultra thin SMD plastic package

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Exposed drain pad for excellent thermal conduction

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1.5kV ESD protection HBM

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34mR Very low Drain-Source ON-state resistance RDS ON

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Very low threshold voltage of 0.65V for portable applications

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-55 to 150°C Junction temperature range