PMXB65ENE

NXP  PMXB65ENE  晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.044 ohm, 10 V, 1.4 V

The is a N-channel enhancement-mode FET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in high-side load switch and charging switch for portable devices, power management in battery driven portables, LED driver and DC-to-DC converter applications.

.

Leadless ultra small and ultra thin SMD plastic package

.

Exposed drain pad for excellent thermal conduction

.

1.5kV ESD protection HBM

.

44mR Very low Drain-Source ON-state resistance RDS ON

.

-55 to 150°C Junction temperature range