NXP PMF280UN,115 晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.28 ohm, 4.5 V, 700 mV
The is a N-channel enhancement-mode ultra-low level FET in a plastic package using TrenchMOS® technology. It is suitable for use in driver circuits and switching in portable appliances applications.
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- Surface-mount package
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- Footprint 40% smaller than SOT23
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- Low ON-state resistance
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- Low threshold voltage
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- -55 to 150°C Junction temperature range
针脚数 3
漏源极电阻 0.28 Ω
极性 N-Channel
耗散功率 560 mW
阈值电压 700 mV
漏源极电压Vds 20 V
连续漏极电流Ids 1.02 A
输入电容Ciss 45pF @20VVds
额定功率Max 560 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 560mW Tc
安装方式 Surface Mount
引脚数 3
封装 SOT-323-3
封装 SOT-323-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Cut Tape CT
制造应用 Consumer Electronics, Power Management, Industrial, Communications & Networking, Computers & Computer Peripherals
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PMF280UN,115 NXP 恩智浦 | 当前型号 | 当前型号 |
PMF290XN,115 恩智浦 | 类似代替 | PMF280UN,115和PMF290XN,115的区别 |
PMF280UN 恩智浦 | 功能相似 | PMF280UN,115和PMF280UN的区别 |