PMZB290UNE2

NXP  PMZB290UNE2  晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.27 ohm, 4.5 V, 700 mV

The is a N-channel enhancement-mode FET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuit applications.

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Low threshold voltage

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Very fast switching

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>2kV HBM ESD protection

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Ultra-thin package profile of 0.37mm

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-55 to 150°C Junction temperature range