PMDPB28UN

NXP  PMDPB28UN  双路场效应管, MOSFET, 双N沟道, 5.8 A, 20 V, 0.03 ohm, 4.5 V, 700 mV

The is a dual N-channel enhancement-mode FET in a small and leadless ultra thin surface-mount plastic package using Trench MOSFET technology. It is suitable for DC-to-DC converters and small brushless DC motor drive applications.

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Very fast switching characteristics

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Exposed drain pad for excellent thermal conduction