PMF780SN

NXP  PMF780SN  晶体管, MOSFET, N沟道, 570 mA, 60 V, 0.78 ohm, 10 V, 2 V

最大源漏极电压Vds Drain-Source Voltage| 60V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 570mA/0.57A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 开启电压Vgs（th） Gate-Source Threshold Voltage| 耗散功率Pd Power Dissipation| 560mW/0.56W Description & Applications| N-channel µTrenchMOS™ ultra low level FET Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Surface mounted package Footprint 40% smaller than SOT23 Low on-state resistance n Low threshold voltage. 描述与应用| N沟道μTrenchMOS™超低水平FET 描述 N沟道增强型场效应在一个塑料包装用 的TrenchMOS™技术 表面贴装封装 足迹比SOT23小40％ 低通态电阻n低阈值电压