NXP PHN210T,118 双路场效应管, MOSFET, 双N沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V
The is an intermediate level N-channel enhancement-mode FET in a plastic package using vertical TrenchMOS technology. It is designed and qualified for use in computing, DC-to-DC converters, logic level translators, motor and relay driver applications.
- .
- Suitable for high frequency applications due to fast switching characteristics
- .
- Suitable for logic level gate drive sources
- .
- Suitable for low gate drive sources
针脚数 8
漏源极电阻 0.08 Ω
极性 Dual N-Channel
耗散功率 2 W
阈值电压 2 V
漏源极电压Vds 30 V
连续漏极电流Ids 2.40 A
上升时间 8 ns
输入电容Ciss 250pF @20VVds
额定功率Max 2 W
下降时间 15 ns
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 2 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.45 mm
封装 SOIC-8
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Consumer Electronics, Industrial, Communications & Networking
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PHN210T,118 NXP 恩智浦 | 当前型号 | 当前型号 |
FDS9926A 飞兆/仙童 | 功能相似 | PHN210T,118和FDS9926A的区别 |
NTMD4N03R2G 安森美 | 功能相似 | PHN210T,118和NTMD4N03R2G的区别 |
NTMD6N02R2G 安森美 | 功能相似 | PHN210T,118和NTMD6N02R2G的区别 |