NXP PHT6N06LT 晶体管, MOSFET, N沟道, 2.5 A, 55 V, 150 mohm, 5 V, 1.5 V
The is a 55V logic level N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS technology. Low conduction losses due to low on-state resistance and electrostatically robust due to integrated protection diodes. Suitable for use in DC to DC converters and general purpose switching applications.
- .
- 150°C Junction temperature
针脚数 3
漏源极电阻 150 mΩ
极性 N-Channel
耗散功率 8.3 W
阈值电压 1.5 V
漏源极电压Vds 55 V
连续漏极电流Ids 5.50 A
工作温度Max 150 ℃
安装方式 Surface Mount
引脚数 3
封装 SOT-223
封装 SOT-223
产品生命周期 Unknown
包装方式 Cut Tape CT
制造应用 电源管理, 消费电子产品, Consumer Electronics, Power Management, 工业, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PHT6N06LT NXP 恩智浦 | 当前型号 | 当前型号 |
BUK98150-55A 恩智浦 | 类似代替 | PHT6N06LT和BUK98150-55A的区别 |
BUK78150-55A 恩智浦 | 类似代替 | PHT6N06LT和BUK78150-55A的区别 |