NXP PHT6NQ10T 晶体管, MOSFET, N沟道, 3 A, 100 V, 90 mohm, 10 V, 3 V
The is a 100V standard level N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS technology. Low conduction losses due to low on-state resistance and higher operating power due to low thermal resistance. Suitable for use in DC to DC converters, motor and relay drivers applications.
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- 150°C Junction temperature
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- Suitable for high frequency applications due to fast switching characteristics
针脚数 4
漏源极电阻 90 mΩ
极性 N-Channel
耗散功率 8.3 W
阈值电压 3 V
漏源极电压Vds 100 V
工作温度Max 150 ℃
安装方式 Surface Mount
引脚数 4
封装 SOT-223
封装 SOT-223
产品生命周期 Unknown
包装方式 Cut Tape CT
制造应用 工业, 电源管理, 电机驱动与控制, Power Management, Motor Drive & Control, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PHT6NQ10T NXP 恩智浦 | 当前型号 | 当前型号 |
FQT7N10LTF 飞兆/仙童 | 功能相似 | PHT6NQ10T和FQT7N10LTF的区别 |
PHT6NQ10T,135 安世 | 功能相似 | PHT6NQ10T和PHT6NQ10T,135的区别 |
PHT6NQ10T/T3 恩智浦 | 功能相似 | PHT6NQ10T和PHT6NQ10T/T3的区别 |