NXP PESD5V0S2UQ 静电保护装置, TVS, 6.8 V, SOT-663, 3 引脚
极性Polarization| 单向 Unidirectional \---|--- 反向关断电压/工作电压VRWMReverse Standoff Voltage| 5V 反向击穿电压VBRBreakdown Voltage| 6.4V 峰值脉冲耗散功率PPPMPeak Pulse Power Dissipation| 150W 峰值脉冲电流IPPmPeak Forward Surge Current| 15A 额定耗散功率PdPower dissipation| Description & Applications| Features • Double ESD protection diodes in SOT663 package • Uni-directional ESD protection of up to two lines • Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs • Low clamping voltage: VCLR = 20 V at Ipp = 15 A • Low reverse leakage current: IRM < 1 nA • ESD protection > 30 kV • IEC 61000-4-2; level 4 ESD • IEC 61000-4-5 surge; Ipp = 15 A at tp = 8/20 µs. 描述与应用| 特性 •在SOT663封装双二极管 •单向ESD保护可至双线 •最大峰值脉冲功率:Ppp=150 W@tp= 8/20μs •低钳位电压:V(CL)R =20 V在IPP= 15 A •低反向漏电流:IRM<1 nA •ESD保护>30千伏 •IEC61000-4-2第4级(ESD) •IEC61000-4-5(浪涌); IPP= 15 A@tp= 8/20μs
型号/品牌 | 代替类型 | 替代型号对比 |
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PESD5V0S2UQ NXP 恩智浦 | 当前型号 | 当前型号 |
PESD5V0S2UQ,115 恩智浦 | 类似代替 | PESD5V0S2UQ和PESD5V0S2UQ,115的区别 |
UESD5.0DT5G 安森美 | 功能相似 | PESD5V0S2UQ和UESD5.0DT5G的区别 |
ESD11A5.0DT5G 安森美 | 功能相似 | PESD5V0S2UQ和ESD11A5.0DT5G的区别 |