NXP PBSS4041PZ 单晶体管 双极, PNP, -60 V, 110 MHz, 770 mW, -5.7 A, 300 hFE
The is a 5.7A PNP breakthrough-in small signal BISS Transistor in a medium power surface-mount plastic package with increased heat-sink.
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- Very low collector-emitter saturation voltage VCEsat
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- High collector current capability IC and ICM
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- High collector current gain hFE at high IC
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- High energy efficiency due to less heat generation
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- Smaller required printed-circuit board PCB area than for conventional transistors
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- AEC-Q101 qualified
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- NPN complement is PBSS4041NZ
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- PB4041PZ Marking code
针脚数 4
极性 PNP
耗散功率 770 mW
击穿电压集电极-发射极 60 V
集电极最大允许电流 5.7A
最小电流放大倍数hFE 120
直流电流增益hFE 300
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2600 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-223
长度 6.7 mm
宽度 3.7 mm
高度 1.8 mm
封装 SOT-223
产品生命周期 Unknown
包装方式 Cut Tape CT
制造应用 Power Management, Consumer Electronics, Industrial, Automotive, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PBSS4041PZ NXP 恩智浦 | 当前型号 | 当前型号 |
PBSS4032PZ 恩智浦 | 类似代替 | PBSS4041PZ和PBSS4032PZ的区别 |
PBHV8215Z 恩智浦 | 类似代替 | PBSS4041PZ和PBHV8215Z的区别 |
PBSS4032NZ 恩智浦 | 类似代替 | PBSS4041PZ和PBSS4032NZ的区别 |