NXP PBSS4041SPN 双极晶体管阵列, NPN, PNP, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC
The is a 60V NPN/PNP low VCEsat Breakthrough In Small Signal BISS Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for load switch, battery driven devices and charging circuits.
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- 150°C Junction temperature
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- Smaller required printed-circuit board PCB area than for conventional transistors
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- High collector current capability
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- High collector current gain
针脚数 8
极性 NPN, PNP
耗散功率 2.3 W
击穿电压集电极-发射极 60 V
集电极最大允许电流 6.7A/5.9A
直流电流增益hFE 300
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.3 W
安装方式 Surface Mount
引脚数 8
封装 SOIC
长度 5 mm
宽度 4 mm
高度 1.75 mm
封装 SOIC
产品生命周期 Unknown
包装方式 Cut Tape CT
制造应用 电源管理, Power Management
RoHS标准 RoHS Compliant
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PBSS4041SPN NXP 恩智浦 | 当前型号 | 当前型号 |
PBSS4041SPN,115 恩智浦 | 功能相似 | PBSS4041SPN和PBSS4041SPN,115的区别 |